 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1792 SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7,8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5,6 ; Drain 2 DESCRIPTION The PA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES * Low on-resistance N-Channel RDS(on)1 = 26 m MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 3.4 A) 1.44 1.8 MAX. P-Channel 1 5.37 MAX. 4 6.0 0.3 4.4 +0.10 -0.05 RDS(on)3 = 42 m MAX. (VGS = 4.0 V, ID = 3.4 A) P-Channel RDS(on)1 = 36 m MAX. (VGS = -10 V, ID = -2.9 A) RDS(on)2 = 54 m MAX. (VGS = -4.5 V, ID = -2.9 A) RDS(on)3 = 65 m MAX. (VGS = -4.0 V, ID = -2.9 A) * Low input capacitance N-Channel Ciss = 760 pF TYP. P-Channel Ciss = 900 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M EQUIVALENT CIRCUIT ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Gate Body Diode Gate Body Diode Drain Drain PA1792G Gate Protection Diode Source Gate Protection Diode Source N-Channel P-Channel Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14557EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan (c) 1999, 2000 PA1792 ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) PARAMETER Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 SYMBOL VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg N-CHANNEL 30 20 6.8 27.2 1.7 2.0 150 P-CHANNEL -30 UNIT V V A A W W C C # 20 # 5.8 # 23.2 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature -55 to +150 Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 2000 mm x 1.6 mm, TA = 25C 2 Data Sheet G14557EJ1V0DS00 PA1792 ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) N-CHANNEL CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 3.4 A VGS = 4.5 V, ID = 3.4 A VGS = 4.0 V, ID = 3.4 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID =3.4 A VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.4 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 6.8 A VDD = 24 V VGS = 10 V IF = 6.8 A, VGS = 0 V IF = 6.8 A, VGS = 0 V di/dt = 100 A / s 760 250 95 20 140 50 30 14 2 5 0.86 30 20 1.5 3.0 MIN. TYP. 20.5 27 31 2.1 7.5 10 MAX. 26 36 42 2.5 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC 10 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1 % ID Wave Form VGS VGS Wave Form IG = 2 mA VGS(on) 90 % RL VDD 0 10 % PG. 90 % 90 % 50 ID 0 10 % 10 % td(on) ton tr td(off) toff tf Data Sheet G14557EJ1V0DS00 3 PA1792 P-CHANNEL CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -2.9 A VGS = -4.5 V, ID = -2.9 A VGS = -4.0 V, ID = -2.9 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -2.9 A VDS = -30 V, VGS = 0 V VGS = -1.5 3.5 MIN. TYP. 30 43 49 -2.0 8.0 -1 MAX. 36 54 65 -2.5 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC # 16 V, VDS = 0 V 900 300 120 23 220 90 70 17 2.5 4.0 0.85 40 30 # 10 VDS = -10 V VGS = 0 V f = 1 MHz ID = -2.9 A VGS(on) = -10 V VDD = -15 V RG = 10 ID = -5.8 A VDD = -24 V VGS = -10 V IF = 5.8 A, VGS = 0 V IF = 5.8 A, VGS = 0 V di/dt = 100 A / s TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID (-) VGS (-) 0 = 1 s Duty Cycle 1 % ID Wave Form VGS (-) VGS Wave Form IG = -2 mA VGS(on) 90 % RL VDD 0 10 % PG. 90 % 90 % 50 ID 0 10 % 10 % td(on) ton tr td(off) toff tf 4 Data Sheet G14557EJ1V0DS00 PA1792 TYPICAL CHARACTERISTICS (TA = 25C) A) N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 2 unit 1 unit dT - Percentage of Rated Power - % 100 80 60 40 20 0 Mounted on ceramic substrate 2of 2000 mm x1.6 mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 d ite im ) Mounted on ceramic substrate of 2000 mm2x1.6 mm, 1 unit PW = 10 0 s 1m s ID(pulse) ID - Drain Current - A ) L 0V on S( = 1 RD GS 10 (V ID(DC) Po we r 10 Di ss ipa m s 10 tio n Lim 0m 1 s ite d 0.1 0.1 TA = 25 C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1000 100 Rth(ch-A) = 73.5C/W 10 1 0.1 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm Single Pulse, 1 unit, TA = 25C 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G14557EJ1V0DS00 5 PA1792 A) N-Channel FORWARD TRANSFER CHARACTERISTICS 100 Pulsed DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 Pulsed 30 VGS = 10 V 4.5 V ID - Drain Current - A ID - Drain Current - A 10 TA =125C 75C 1 25C -25C 0.1 1 VDS = 10 V 2 3 4 5 25 4.0 V 20 15 10 5 0 0 0.4 0.8 1.2 1.6 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed TA = -25C 25C 10 RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 90 ID = 4.0 A 80 6.8 A 70 60 50 40 30 20 10 0 0 5 10 15 1 75C 125C 0.1 0.1 1 10 100 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 4.0 V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 80 60 4.5 V 10 V 2.0 40 20 0 0.1 1 10 100 1.0 - 50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 6 Data Sheet G14557EJ1V0DS00 PA1792 A) N-Channel RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 40 VGS = 4.5 V IF - Diode Forward Current - A 50 Pulsed 10 VGS = 10 V VGS = 0 V 30 10 V 20 1 10 - 50 0 50 100 150 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz tr 1000 Ciss 100 tf td(off) td(on) Coss 100 Crss 10 10 0.1 1 10 100 1 0.1 VDS = 15 V VGS = 10 V RG = 10 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/s VGS = 0 V 35 30 25 20 15 10 5 0 0 VDS 5 10 15 20 ID = 6.8 A 25 VDD = 24 V 15 V 6V 14 12 VGS 10 8 6 4 2 0 30 100 10 1 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 Data Sheet G14557EJ1V0DS00 7 PA1792 B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 2 unit 1 unit dT - Percentage of Rated Power - % 100 80 60 40 20 0 Mounted on ceramic substrate 2of 2000 mm x1.6 mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) Mounted on ceramic substrate of 2000 mm2 x 1.6 mm, 1 unit PW = 10 0 s 1m s ID - Drain Current - A -10 )L on S( = RD GS d ite im V) -10 (V ID(DC) Po we r 10 Di ss ipa m s 10 tio n Lim -1 0m s ite d -0.1 -0.1 TA = 25 C Single Pulse -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1000 100 Rth(ch-A) = 73.5C/W 10 1 0.1 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm Single Pulse, 1 unit, TA = 25C 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 8 Data Sheet G14557EJ1V0DS00 PA1792 B) P-Channel FORWARD TRANSFER CHARACTERISTICS -100 -10 -1 -0.1 TA =150C 75C Pulsed -30 Pulsed -25 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A ID - Drain Current - A -20 -15 -10 -5 VGS = -10 V -4.5 V -4.0 V 25C -25C -0.01 VDS = -10 V -1 -2 -3 -4 -0.001 0 0 0 -0.4 -0.8 -1.2 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S 100 VDS = -10V Pulsed TA = -25C 25C 10 RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed ID = -1.2 A -5.8 A 50 40 30 20 10 0 -5 -15 75C 150C 1 0.1 -0.001 -0.01 -0.1 -1 -10 -100 0 -10 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = -4.0 V -4.5 V -10 V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -3.0 VDS = -10 V ID = -1 mA 80 -2.0 60 40 20 0 -0.1 -1.0 -1 -10 -100 0 - 50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C Data Sheet G14557EJ1V0DS00 9 PA1792 B) P-Channel RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed VGS = -4.5 V 10 VGS = 0 V 1 80 60 40 VGS = -4.0 V -4.5 V -10 V IF - Diode Forward Current - A 0.1 20 0 - 50 0 50 100 150 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 10000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz 1000 tr tf 1000 Ciss 100 Coss 100 Crss td(off) td(on) 10 VDS = -15 V VGS = -10 V RG = 10 -100 10 -0.1 -1 -10 -100 -0.1 1 -1 -10 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/s VGS = 0 V -25 -20 -15 -10 -5 0 0 100 VDD = -24 V -15 V -6 V -10 -8 -6 VGS -4 -2 ID = -5.8 A 0 10 VDS 5 10 15 1 -0.1 -1 -10 -100 20 ID - Drain Current - A QG - Gate Charge - nC 10 Data Sheet G14557EJ1V0DS00 VGS - Gate to Source Voltage - V -30 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -12 PA1792 [MEMO] Data Sheet G14557EJ1V0DS00 11 PA1792 * The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
Price & Availability of UPA1792
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |